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Dr. Albert Davydov Page one of two

Albert V. Davydov, Ph.D.

Office Address:

National Inst. of Standards and Tech. (NIST)

100 Bureau Dr., Stop 8555

Gaithersburg, MD 20899

Phone / Fax: (301) 975-4916 / (301) 975-4553


QUALIFICATIONS SUMMARY: 20+ years experience in synthesis, processing and characterization of electronic materials. Comprehensive knowledge and expertise in a) nanowire growth, thin film deposition and bulk crystal growth techniques; b) metallization to wide-band-gap semiconductors; c) structural characterization of nanowires, films and bulk crystals; d) experimental and computational study of phase equilibria.

INSTRUMENTATIONAL SKILLS: Growth systems: HVPE, MOCVD, Bridgman, e-beam deposition; XRD; SEM; EBSD; AFM; DTA; Electrical characterization: 4-point probe, Hall


National Institute of Standards and Technology

Materials Research Scientist (2005 – present)

Guest Scientist (1997-2004)

+ Research Associate at the University of Maryland

Dept. Mat. Sci. & Eng., College Park, MD (2000-2005)

Initiated projects on wide-band-gap compound semiconductors and other electronic materials:

  • Conducted growth, metallization and characterization of ZnO, GaN and Si nanowires and devices

  • Developed combinatorial approach for optimization of electrical contacts to GaN thin films

  • Evaluated thermal stability of gallium nitride thin films in various ambients and assessed Pressure-Temperature-Composition Phase Diagram of the Ga-N system

  • Assessed crystalline quality, composition and strain in MOCVD & HVPE AlxGa1-xN thin films

  • Conducted structural characterization of Te, VO2 and TiO2 nanowires, and Fe1-xCoxSi2, Hf1-xTixO2 and Hf1-xSixO2 thin films

  • Participated in the development of the thermodynamic database for commercial superalloys:

Assessed phase diagrams and thermochemistry of the Co-Mo and Co-Ti systems

Chem. Eng. Dept., University of Florida, Gainesville, FL

Assistant Scientist (1997-2000)

Postdoctoral Research Associate (1993-1997)

Conducted research on visible light emitting materials and injection devices:

  • Operated and troubleshooted MOCVD system for making thin film semiconductors.

  • Conducted experiments on: a) MOCVD growth and characterization of Zn(Mg)S and ZnCdS heterostructures, and quantum confined Si/ZnS nanostructures for optoelectronic applications, b) initial deposition studies of Si, ZnS and SrS.

  • Conducted project on assessment of thermochemical and phase diagram data in the III-V, II-VI, and I-III-VI systems, aimed at optimization of the growth conditions for selected compound semiconductors, such as GaAs, GaN, ZnS and CuInSe2.

  • Trained and coordinated graduate students in MOCVD growth and phase diagram assessment.

  • Assisted in teaching chemical thermodynamics course for undergraduate students: lecturing and supervising the ASPEN computer project on VLE equilibria.

Engineering Materials Dept., Mappin St., Univ. of Sheffield, Sheffield (UK)

Invited Researcher (on leave from Moscow State University) (1992-1993)

Accomplished Royal Society fellowship program on thermodynamic evaluation of materials for electronic application:

  • Optimized thermodynamic description of the Zn-Te system and evaluated limiting growth conditions for the ZnTe compound semiconductor.

  • Contributed to calorimetric studies of selected high-Tc superconductor phases.

Chemistry Dept., University of Wisconsin, Madison, WI

Visiting Assistant Professor (on leave from Moscow State University) (1992)

Developed process for varying electronic properties of II/VI based chemical sensors by thermal treatment of CdS, CdSe crystals in a controlled gas atmosphere.

Chemistry Dept., Moscow State University, Moscow (RUSSIA)

Assistant Professor (1991-1993)

Researcher (1987-1991)

Conducted research on synthesis and characterization of narrow band gap semiconductors for optoelectronic applications:

  • Synthesized and characterized bulk single crystals of III-VI and IV-VI materials by liquid-solid and vapor-solid techniques for use in active elements of IR-detectors.

  • Investigated phase equilibria in the metal-chalcogenide systems: In-Tl-X (X= Se, Te) and Tl-Bi-Te, in search for new alloy semiconductors with variable band gap.

  • Evaluated thermochemistry and phase diagram data in the metal-chalcogenide systems, directed at optimization of crystal growth conditions for compound semiconductors.

Teaching: taught general and inorganic chemistry courses for undergraduate students


Ph.D. Inorganic Chemistry, Moscow State University, Russia (1989)

M.S. Chemistry, Moscow State University, Russia (1984)


“25 Most Innovative Products (GaN Nanowire Nanolights)” Award

by R&D Magazine and Micro/Nano Newsletter (to NIST team) (2006)

Award of International Centre for Diffraction Data (ICDD) (2003)

Best Paper Award on ‘Phase Diagram Assessment’ from APDIC (2001)

Royal Society Fellowship Award, UK (1992-1993)

University of Wisconsin Visiting Scholarship, USA (1992)

PROFESSIONAL Head of the Semiconductor Task Group for the International Centre for AFFILIATIONS: Diffraction Data (ICDD)

Member: American Association for Crystal Growth

Reviewer: NSF, CRDF and peer-reviewed journals

Associate Editor: Journal of Mining and Metallurgy

OTHER SKILLS: Fluent in English and Russian languages; knowledge of the statistical and

specialized scientific (ThermoCalc, MTDATA) software packages

PUBLICATIONS: see Appendix attached

RECORD of GRANTS and COTRACTS for the past 15 years:

  1. Semiconductor nanowires for sensorics, opto/electronics and energy applications

Project Leader; Sponsor: NIST, 2007 - present

  1. Growth and metallization of semiconductor nanowires

Sponsor: NIST, 2004 - 2007

  1. Combinatorial development of electrical contacts to n- and p-GaN semiconductor

Sponsor: NIST/University of Maryland, 2003-2004

  1. Metallurgy of the electrical contacts to wide-band-gap semiconductors

Sponsor: NIST/University of Maryland, 2000-2003

  1. Evaluation of phase diagrams for selected electronic materials and metal alloys

Sponsor: NIST/University of Florida, 1999/00

  1. Thermodynamic evaluation and calculation of phase diagrams for Co-Mo and selected Ni-based alloys. Sponsor: NIST/University of Florida, 1997/99

  2. Bulk crystal growth and epitaxy of compound semiconductors for visible light emitters. Sponsor: NRC/COBASE, 1995/96

  3. Assessment of the thermochemistry and phase diagrams for selected wide band gap compound semiconductors. Sponsor: Stand. Reference Data Program, NIST, 1994/95


  1. S. Krylyuk, A.V. Davydov, and I. Levin, Tapering Control of Si Nanowires Grown from SiCl4 at Reduced Pressure, ACS Nano, 2011, v. 5, 656

  2. A. Motayed, J.E. Bonevich, S. Krylyuk, A.V. Davydov, G. Aluri, and M.V. Rao, Correlation between the performance and microstructure of Ti/Al/Ti/Au Ohmic contacts to p-type silicon nanowires, Nanotechnology, 2011, v. 22, 75206

  3. B. Krishnan, R. Venkatesh, K.G. Thirumalai, Y. Koshka, S. Sundaresan, I. Levin, A.V. Davydov, J.N. Merrett, Substrate-Dependent Orientation and Polytype Control in SiC Nanowires Grown on 4H-SiC Substrates, Crystal Growth & Design, 2011, v. 11, 538

  4. R.A. Bernal, R. Agrawal, B. Peng, K.A. Bertness, N.A. Sanford, A.V. Davydov, and H.D. Espinosa, Effect of Growth Orientation and Diameter on the Elasticity of GaN Nanowires. A Combined in Situ TEM and Atomistic Modeling Investigation, Nanoletters, 2011, v. 11, 548

  5. G. Stan, S. Krylyuk, A.V. Davydov, and R. F. Cook, Compressive Stress Effect on the Radial Elastic Modulus of Oxidized Si Nanowires, Nanoletters, 2010, v. 10, 2031

  6. S. Krylyuk, A.V. Davydov, I. Levin, A. Motayed, and M.D. Vaudin, Rapid thermal oxidation of silicon nanowires, Applied Physics Letters, 2009, 94, 63113

  7. A. Motayed and A.V. Davydov, GaN-nanowire/amorphous-Si core-shell

heterojunction diodes, Applied Physics Letters, 2008, v. 93, 193102

  1. A. Motayed, A.V. Davydov, S. N. Mohammad, and J. Melngailis, Experimental investigation of electron transport properties of gallium nitride nanowires, Journal of Applied Physics, 2008, v. 104, 24302

  2. S.L. Rumyantsev, M.S. Shur, M.E. Levinshtein, A. Motayed, and A.V. Davydov, Low-frequency noise in GaN nanowire transistors, Journal of Applied Physics, 2008, v. 103, 064501

  3. D.H. Hill, R.A. Bartynski, N.V. Nguyen, A.V. Davydov, D.C. Horowitz, and M.M. Frank, The relationship between local order, long range order, and sub-band-gap defects in hafnium oxide and hafnium silicate films, Journal of Applied Physics, 2008, v. 103, 093712

  4. G. Stan, S. Krylyuk, A.V. Davydov, M. Vaudin, L.A. Bendersky, and R.F. Cook, Surface effects on the elastic modulus of Te nanowires, Applied Physics Letters, 2008, v. 92, 241908

  5. A.L. Syrkin, V. Ivantsov, A. Usikov, V.A. Dmitriev, G. Chambard, P. Ruterana, A.V. Davydov, S.G. Sundaresan, E. Lutsenko, A.V. Mudryi, E.D. Readinger, G.D. Chern-Metcalfe, and M. Wraback, InN layers grown by the HVPE, Physica Status Solidi C, 2008, v. 5, 1792

  6. A. Usikov, O. Kovalenkov, V. Soukhoveev, V. Ivantsov, A. Syrkin, V. Dmitriev, A.Yu. Nikiforov, S. G. Sundaresan, S.J. Jeliazkov, and A.V. Davydov, Electrical and optical properties of thick highly doped p-type GaN layers grown by HVPE, Physica Status Solidi C, 2008, v. 5, 1829

  7. A.Yu. Zavrazhnov, I.D. Zartsyn, A.V. Naumov, V.P. Zlomanov and A.V. Davydov, Composition Control of Low-Volatility Solids Through Chemical Vapor Transport Reactions. I. Theory of Selective Chemical Vapor Transport, Journal of Phase Equilibria and Diffusion, 2007, v. 28, 510

  8. S.G. Sundaresan, A.V. Davydov, M.D. Vaudin, I. Levin, J.E. Maslar, Y-L. Tian, and M.V. Rao, Growth of Silicon Carbide Nanowires by a Microwave Heating-Assisted Physical Vapor Transport Process Using Group VIII Metal Catalysts, Chemistry of Materials, 2007, v. 19, 5531

  9. A. Motayed, A.V. Davydov, M. He, S. N. Mohammad, and J. Melngailis, 365 nm operation of n-nanowire/p-gallium nitride homojunction light emitting diodes, Appl. Phys. Lett., 2007, v. 90, 183120

  10. S.G. Sundaresan, M.V. Rao, Y-L. Tian, J.A. Schreifels, M.C. Wood, K.A. Jones, and A.V. Davydov, Comparison of Solid-State Microwave Annealing with Conventional Furnace Annealing of Ion-Implanted SiC, J. of Electronic Materials, 2007, v. 36, 324

  11. O. Kryliouk, H.J. Park, Y.S. Won, T. Anderson, A.V. Davydov, I. Levin, J.H. Kim, and J.A. Freitas, Controlled synthesis of single-crystalline InN nanorods, Nanotechnology, 2007, v. 18, 135606

  12. A. Motayed, M. Vaudin, A.V. Davydov, J. Melngailis, M. He, and S. N. Mohammad, Diameter dependent transport properties of gallium nitride nanowire field effect transistors, Appl. Phys. Lett., 2007, v. 90, 043104

  13. A. Motayed, M. He, A.V. Davydov, J. Melngailis, and S. N. Mohammad, Simple model for dielectrophoretic alignment of gallium nitride nanowires, J. Vac. Sci. Technol., 2007, v. 25B, 120

  14. A. Motayed, M. He, A.V. Davydov, J. Melngailis, and S. N. Mohammad, Realization of reliable GaN nanowire transistors utilizing dielectrophoretic alignment technique, - J. Appl. Phys., 2006, v. 100, 114310

  15. N. Mahadik, M.V. Rao, and A.V. Davydov, Thermally Stable Ge/Cu/Ti Ohmic Contacts to n-type GaN, - J. Electronic Materials, 2006, v. 35, 2035

  16. A. Motayed, A.V. Davydov, M.D. Vaudin, I. Levin. J. Melngailis, and S. N. Mohammad, Fabrication of GaN-based nanoscale device structures utilizing focused ion beam induced Pt deposition, - J. Appl. Phys., 2006, v. 100, 024306

  17. K.A. Bertness, A. Roshko, N.A. Sanford, J.M. Barker, A.V. Davydov, Spontaneously grown GaN and AlGaN nanowires, - J. Cryst. Growth, 2006, v. 287, 522

  18. K.A. Bertness, N.A. Sanford, J.M. Barker, J.B. Schlager, A. Roshko, A.V. Davydov, I. Levin, Catalyst-free growth of GaN nanowires,- J. of Electronic Materials, 2006, v. 35, 576

  19. J.E. Van Nostrand, K.L. Averett, R. Cortez, J. Boeckl, C.E. Stutz, N.A. Sanford, A.V. Davydov, J.D. Albrecht, Molecular Beam Epitaxial Growth of High-Quality GaN Nanocolumns, - J. of Crystal Growth, 2006, v. 287, 500

  20. A. Davydov, A. Motayed, W.J. Boettinger, R.S. Gates, Q. Z. Xue, H. C. Lee, Y. K. Yoo, Combinatorial optimization of Ti/Al/Ti/Au ohmic contacts to n-GaN, - Phys. Stat. Sol. C, 2005, v. 2, 2551

  21. M.A. Mastro, O.M. Kryliouk, T.J. Anderson, A. Davydov, A.J. Shapiro, Influence of polarity on GaN thermal stability, - J. Cryst. Growth, 2005, v. 274(1-2), 38

  22. I. Levin, A.V. Davydov, B. Nikoobakht, and N. Sanford, Growth habits and defects in ZnO nanowires grown on GaN/sapphire substrates, - Appl. Phys, Letters, 2005, v. 87, 103110

  23. N.A. Sanford, A. Davydov, D.V. Tsvetkov, A.V. Dmitriev, S. Keller, U.K. Mishra, S.P. DenBaars, S.S. Park and J.Y. Han, R.J. Molnar, Measurement of Second Order Susceptibilities of GaN and AlGaN, - J. Appl. Phys., 2005, v.97, 053512

  24. A. Motayed, A. Davydov, W. J. Boettinger, D. Josell, A.J. Shapiro, I. Levin, T. Zheleva, G.L. Harris, Realization of improved metallization-Ti/Al/Ti/W/Au Ohmic contacts to n-GaN for high-temperature application, - Phys. Stat. Sol. C, 2005, v. 2, 2536

  25. N.A. Sanford, L.H. Robins, M.H. Gray, J.E. Van Nostrand, C. Stutz, R. Cortez, A. Davydov, A. Shapiro, I. Levin, and A. Roshko, Fabrication and analysis of GaN nanorods grown by MBE, - Phys. Stat. Sol. C, 2005, v. 2, 2357

  26. N.A. Sanford, A. Munkholm, M.R. Krames, A. Shapiro, I. Levin, A. Davydov, S. Sayan, L.S. Wielunski, and T.E. Madey, Refractive index and birefringence of InGaN films grown by MOCVD, - Phys. Stat. Sol. C, 2005, v. 2, 2783

  27. N. V. Nguyen, A.V. Davydov, and D. Chandler-Horowitz, Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon, - Appl. Phys. Letters, 2005, v. 87, 192903

  28. A. Davydov, L.A. Bendersky, W.J. Boettinger, D. Josell, M.D. Vaudin, K.-S. Chang c and I. Takeuchi, Combinatorial Investigation of Structural Quality of Au/Ni Contacts on GaN, Appl. Surf. Science, 2004, v. 223(1-3), 24

  29. Schenck, D.L. Kaiser, A. Davydov, High-Throughput Characterization of the Optical Properties of Compositionally Graded Combinatorial Films, -Appl. Surf. Science, 2004, v. 223(1-3), 200

  30. B. Nikoobakht, A. Davydov, and S.J. Stranick, Controlling the Growth Direction of ZnO Nanowires on c-Plane Sapphire, in: “Nanoparticles and Nanowire Building Blocks—Synthesis, Processing, Characterization and Theory”, MRS Symp. Proc. 818, Warrendale, PA, 2004, M8.25.1

  31. A. Motayed, K.A. Jones, M.A. Derenge, M.C. Wood, D. N. Zakharov, Z. Liliental-Weber, D.J. Smith, A. Davydov, W.T. Anderson, A.A. Iliadis, and S. Noor Mohammad, Electrical, Microstructural and Thermal Stability Characteristics of Ta/Ti/Ni/Au Contacts to n-GaN, – J. Appl. Phys., 2004, v. 95(3), 1516

  32. D.B. Migas, L. Miglio, M. Rebien, W. Henrion, P. Stauss, A.G. Birdwell, A. Davydov, V.L. Shaposhnikov, and V.E. Borisenko, Structural, electronic, and optical properties of -(Fe1-xCox)Si2, - Physical Review B, 2004, v. 69, 115204

  33. A. Davydov and U.R. Kattner, Revised Thermodynamic Description of the Co-Mo System, – Journal of Phase Equilibria, 2003, v. 24(3), p. 209

  34. A. Sanford, L. H. Robins, A. Davydov, A. Shapiro, D. V. Tsvetkov, A. V. Dmitriev, S. Keller, U. K. Mishra, S. P. DenBaars, Comparative Studies of Refractive Index for MOCVD and HVPE AlxGa1-xN films Grown on Sapphire Substrates, – J. Appl. Phys., 2003, v. 94(5), 2980

  35. C.J. Lu, A. Davydov, D. Josell, and L.A. Bendersky, Interfacial reactions of Ti/n-GaN contacts at elevated temperature, – J. Appl. Phys., 2003, v. 94, p. 245

  36. J. Unland, B. Onderka, A. Davydov, R. Schmid-Fetzer, Thermodynamics and Phase Stability in the Ga-N System, – J. Cryst. Growth, 2003, v. 256, p. 33

  37. V.P. Zlomanov, A.J. Zavrazhnov, A. Davydov, Non-stoichiometry and P-T-x Diagrams of Binary Systems, - Intermetallics, 2003, v.11, p. 1287

  38. A. Motayed, A. Davydov, L.A. Bendersky, M.C. Wood, M.A. Derenge, D.F. Wang, K.A. Jones, and S.N. Mohammad, Novel high-transparency Ni/Au bilayer contacts to n-type GaN, - J. Appl. Phys., 2002, v.92, p. 5218

  39. A. Davydov, W.J. Boettinger, U.R. Kattner and T.J. Anderson, Thermodynamic Assessment of the Gallium-Nitrogen System, - Phys. Stat. Sol. A, 2001, v. 188, p. 407

  40. M.A. Mastro, O.M. Kryliouk, M.D. Reed, T.J. Anderson, A. Davydov, A.J. Shapiro, Thermal Stability of MOCVD and HVPE GaN Layers in H2, HCl, NH3 and N2, - Phys. Stat. Sol. A, 2001, v. 188, p. 467

  41. V. Soukhoveev, V. Ivantsov, Yu. Melnik, A. Davydov, D. Tsvetkov, K. Tsvetkova, I. Nikitina, A. Zubrilov, A. Lavrentiev, V. Dmitriev, Characterization of 2.5” Diameter Bulk GaN Grown from Melt-Solution, - Phys. Stat. Sol. A, 2001, v. 188, p. 411

  42. D. Tsvetkov, Yu. Melnik, A. Davydov, A. Shapiro, O. Kovalenkov, J.B. Lam, J.J. Song, V. Dmitriev, Growth of Submicron AlGaN/GaN/AlGaN Heterostructures by HVPE, - Phys. Stat. Sol. A, 2001, v. 188, p. 429

  43. A. Davydov, U.R. Kattner, D. Josell, J.E. Blendell, R.M. Waterstrat, A.J. Shapiro, and W.J. Boettinger, Determination of the CoTi Congruent Melting Point and Thermodynamic Re-assessment of the Co-Ti System, - Metall. & Mater. Trans. A., v. 32A, 2001, p. 2175

  44. M. Ahonen, B. Liu, A. Davydov, E. Ristolainen, P. Holloway, Interfacial Reactions Between Metals and Gallium Nitride. – in: “31st State-of-the-Art Program on Compound Semiconductors” Ed. D.N. Buckley, S.N.G. Chu, and F. Ren, ECS Proceedings, 1999, v. 99-17, p.114

  45. A. Davydov, U.R. Kattner, Thermodynamic Assessment of the Co-Mo System. – Journal of Phase Equilibria, 1999, v. 20(1), p. 5

  46. A. Davydov, T.J. Anderson, Thermodynamic Analysis of the Ga-N System. – In: “III-V Nitride Materials and Processes III“ Ed. T.D. Moustakas et al., ECS Proceedings, 1998, v. 98-18, p. 38

  47. J.W. Lee, B. Pathangey, M.R. Davidson, P.H. Holloway, E.S. Lambers, A. Davydov, T.J. Anderson, S.J. Pearton, Comparison of plasma chemistries for dry etching thin film electroluminescent display materials. - J. Vacuum Sci. Technology A, 1998, v. 16(4), p. 2177

  48. J.W. Lee, B. Pathangey, M.R. Davidson, P.H. Holloway, E.S. Lambers, A. Davydov, T.J. Anderson, S.J. Pearton, Electron cyclotron resonance plasma etching of oxides and SrS and ZnS-based electroluminescent materials for flat panel displays. – J. Vacuum Sci. Technology A, 1998, v. 16(3), p.1944

  49. C.-H. Chang, B.J. Stanbery, A. Morrone, A. Davydov, T.J. Anderson, Novel multilayer process for CuInSe2 thin film formation by rapid thermal processing. – In: “Thin-film structures for photovoltaics” (MRS, Boston, 1997). MRS Symposium Proceedings, 1998, v. 485, p. 163

  50. H. P. Maruska, R. Sudharsanan, E. Bretschneider, A. Davydov, J.E. Yu, B. Pathangey, K.S. Jones and T.J. Anderson, Carrier confinement effects in epitaxial silicon quantum wells prepared by MOCVD. -In: “Microcrystalline and nanocrystalline semiconductors” (MRS, Pittsburgh, 1995), MRS Symposium Proceedings, v. 358, p.987

  51. E. Bretschneider, A. Davydov, C. McCreary, , Li Wang, T.J. Anderson, H.P. Maruska, P. Norris, I. Goepfert, T.D. Moustakas, ZnS/Si/ZnS quantum well structures for visible light emission. -In: “Surface/interface and stress effects in electronic material nanocrystals”, (MRS, Pittsburgh, 1996), MRS Symposium Proceedings, v. 405, p.295

  52. C.H. Chang, A. Davydov, B.J. Stanbery, T.J. Anderson, Thermodynamic assessment of the Cu-In-Se system and application to thin film photovoltaics. - 25th IEEE Photovoltaic Specialist Conference, Washington, DC, 1996. Proceedings, p.849

  53. A. Davydov, M.H. Rand and B.B. Argent, Review of heat capacity data for tellurium. -CALPHAD, 1995, v.19(3). p.375

  54. A. Davydov, V.P. Zlomanov, Optimization of the thermodynamic properties and phase diagram of the Ga-As system.- Inorg. Materials, 1994, v.30(3), p. 309

  55. B.A. Akimov, A.V. Albul, A. Davydov, V.P. Zlomanov, L.I. Ryabova, M.E. Tamm, Pressure Sensor.- SU Patent No 1527524 A1 (1989)

  56. A. Davydov, M.E. Tamm, V.P. Zlomanov, Phase equilibria in the thallium selenide-indium selenide system. – Russ. J. Inorg. Chem., 1988, v.33(7), p.1067

  57. A. Davydov, M.E. Tamm, V.P. Zlomanov, Solid solutions in the InTe-TlTe system. – Russ. J. Inorg. Chem.,1987, v. 32(7), p.1055

  58. N.Yu. Artyushina, A. Davydov, V.P.Zlomanov, L.I. Ryabova, M.E. Tamm, Modulation of the energy band relief of single crystal 2PbTe-TlBiTe2 alloys. -Sov. Phys. Semicond., 1986, v.20(2), p.158

  59. B.A. Akimov, A.B. Albul, A. Davydov, V.P.Zlomanov, L.I. Ryabova, M.E. Tamm, Transport effects and percolation conduction in the In1-xTlxTe solid solutions.-Sov. Physics - Solid State, 1986, v. 28(9), p.1502


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