Transit-time mechanism of plasma instability in high-electron mobility transistors, phys stat sol. (a) 202, No. 10, R113-R115 (2005) 1097




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M. S. Shur. List of Publications and Patents


Updated 8/9/2005


1108. S. K. O'Leary, B. E. Foutz, M. S. Shur, and L. F. Eastman, Steady-State and Transient Electron Transport within bulk wurtzite indium nitride: an updated semi-classical three-valley Monte Carlo Simulation analysis.

1107. V. Ryzhii, A. Satou, I. Khmyrova, M. Ryzhii, T. Otsuji 2, V. Mitin, and M. S. Shur, Terahertz Plasma Instability in Tunneling-Injection Transit-Time Lateral Schottky Diode, NPMS7-SIMD5 Conference, (http://www.eas.asu.edu/~nano/S5N7.htm ), Maui (Hawaii) Nov.27 - Dec.2, 2005

1106. X. Hu, J. Deng, J. P. Zhang, A. Lunev, Y. Bilenko, T. Katona, M. S. Shur, R. Gaska, M. Shatalov, A. Khan, Deep Ultraviolet Light-Emitting Diodes, phys. stat. sol. (a) zzz, No. z, zzz–zzz (2006)

1105. D. Ciplys, M. S. Shur, A. Sereika, R. Rimeika, R. Gaska, Q. Fareed, J. Zhang, X. Hu, A. Lunev, and Yu. Bilenko, Deep-UV LED controlled AlGaN-based SAW oscillator. phys. stat. sol. (a) zzz, No. z, zzz–zzz (2006)

1104. V. Ryzhii, M. Ryzhii, I. Khmyrova, T. Otsuji, and M. Shur, “Resonant terahertz photomixing in integrated HEMT-QWIP device” SSDM-05, accepted

1103. F. Teppe, D. Veksler, V. Yu. Kachorovski, A. P. Dmitriev, S. Rumyantsev, W. Knap, and M.S. Shur, Plasma Waves Resonant Detection of sub-Terahertz Radiation by Field Effect Transistor at 300K, Nanostructures: physics and technology, 13 International Symp., St. Petersburg, Russia, June 20-25, 2005, Proceedings, pp. 229-230

1102. G. Tamulaitis, J. Mickevičius, M. S. Shur, R. S. Qhalid Fareed, J. P. Zhang, and R. Gaska, Carrier lifetime and diffusion in GaN epilayers grown by MEMOCVDTM, physica status solidi (a),

1101. G. Tamulaitis, K. Kazlauskas, A. Žukauskas, J. Mickevičius, M. S. Shur, R. S. Qhalid Fareed, J. P. Zhang, and R. Gaska, Study of exciton hopping in AlGaN epilayers by photoluminescence spectroscopy and Monte Carlo simulation, physics status solidi (a)

1100. N. Braga, R. Mickevicius, W. Fichtner, R. Gaska, M. S. Shur, G. Simin, and M. Asif Khan, Simulation of AlGaN/GaN Heterostructure Field Effect Transistors, SSDM-05

1099. S. K. O'Leary, B. E. Foutz, M. S. Shur, and L. F. Eastman, Steady-State and Transient Electron Transport within the III-V nitride semiconductors, GaN, AlN, and InN: A Tutorial and a Review

1098. V. Ryzhii, A. Satou, M. S. Shur, Transit-time mechanism of plasma instability in high-electron mobility transistors, phys. stat. sol. (a) 202, No. 10, R113-R115 (2005)

1097. S. L. Rumyantsev, A. P. Dmitriev, M. E. Levinshtein, and M. S. Shur, Unsolved Problems of Low Frequency Noise in GaN-Based HFETs, Undine, Italy

1096 I. Khmyrova, M. Ryzhii, M. S. Shur, V. Ryzhii, Resonant terahertz heterostructure photomixer with lateral schottky junction, Prague (2005)

1095. N. Braga, R. Mickevicius, W. Fichtner, R. Gaska, M. S. Shur, Non-uniform Stress Effects in GaN based Heterojunction Field Effect Transistors, submitted to CSIC 2005

1094. A. Satou, I. Khmyrova, A. Chaplik, V. Ryzhii, and M. S. Shur, Spectra of standing and traveling plasma waves in two-dimensional electron channels, Physica E, submitted

1093 K. Kazlauskasa), A. Žukauskas, and G. Tamulaitis, J. Mickevičius and M. S. Shur, R. S. Qhalid Fareed, J. P. Zhang and R. Gaska, Exciton hopping and nonradiative decay in AlGaN epilayers

1092. S. Karmalkar,

1091. V. V. Popov, O.V. Polischuk, G. M. Tsymbalov, M. S. Shur, W. Knap, Electrodynamics of plasma oscillations in semiconductor microdevices with two-dimensional electron channels, 10th International Conference on Mathematical Methods in Electromagnetic Theory, Sept. 14-17, 2004 Page(s):94 - 99 (2004)

1090. M. S. Shur, Terahertz technology: devices and applications, ESDRC proceedings

1089. Hua Zhong, N. Karpowicz, Jingzhou Xu, Yanqing Deng, W. Ussery, M. Shur, X.-C. Zhang, Inspection of space shuttle insulation foam defects using a 0.2 THz gunn diode oscillator, Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference, Publication Date: Sept. 27 - Oct. 1, 2004 pp.753 - 754 ISSN: DOI: 10.1109/ICIMW.2004.1422311

1088. M. S. Shur, J. S. Dordick, and P. M. Ajayan, Fluid Delivery to Cells and Sensing Properties of Cells Using Nanotubes, Patent Publication Application, US2004/0186459 A1, Sep. 23 (2004)

1087. S. Saygi, A. Koudymov, S. Rai, V. Adivarahan, J. Yang, G. Simin, M. Asif Khan, J. Deng, M.S. Shur, and R. Gaska, Real Space Electron Transfer in III-Nitride Metal-Oxide-Semiconductor-Heterojunction (MOSH) Structures, Appl. Phys. Lett., accepted for publication

1086. D. Ciplys, M. S. Shur, R. Rimeika, G. Bu, R. Gaska, and Q. Fareed,"Acousto-optic interaction in III-nitride based optical waveguides: potential for UV range," 12th European Conference on Integrated Optics (ECIO'05), 6-8 April 2005, Grenoble-France, Book of Abstracts, pp.85-88

1085. D. Veksler, F. Teppe, A. P. Dmitriev, V. Yu. Kachorovskii, M. S. Shur, Detection of terahertz radiation in gated two-dimensional structures governed by dc current, PRB

1084. J. Lusakowski, F. Teppe, N. Dyakonova, Y. M. Meziani, W. Knap, T. Parenty, S. Bollaert, A. Cappy, V. Popov, M. S. Shur, Terahertz generation by plasma waves in nanometer gate high electron mobility transistors, physica status solidi (a), Volume 202, Issue 4, Date: March 2005, Pages: 656-659

1083. M. E. Levinshtein, A. P. Dmitriev, S. L. Rumyantsev, and M. S. Shur, Model of the 1/f Noise in GaN/AlGaN Heterojunction Field Effect Transistors, Spain, Salamanka, September (2005)

1082. J. Mickevičius, M. S. Shur R. S. Qhalid Fareed, J. P. Zhang, and R. Gaska, and G. Tamulaitis, Time-resolved experimental study of carrier lifetime in GaN epilayers, and G. Tamulaitis, Time-resolved experimental study of carrier lifetime in GaN epilayers, Appl. Phys. Lett.

1081. F. Teppe, D. Veksler, V. Yu. Kachorovski, A.P. Dmitriev, X. Xu, X.-C. Zhang, S. Rumyantsev, W. Knap, and M.S. Shur, Plasma Waves Resonant Detection of Femtosecond Pulsed Terahertz Radiation by Nanometer Field Effect Transistor, Applied Physics Letters, accepted for publication

1080. M. S. Shur and A. Zukauskas, Solid-State Lighting: Towards Superior Illumination, Proceedings of IEEE, (2005), accepted

1079. J. Mickevicius, G. Tamulaitis, M. Shur, Q. Fareed, and R. Gaska, Study of Optical Gain in Thick GaN Epilayers by Variable Stripe Length Technique, Mater. Res. Soc. Symp. Proc. Vol. 883 © 2005 Materials Research Society FF4.4.1/V4.4.1

1078. M. S. Shur, Physics of GaN Devices, Low frequency noise of light emitting diodes, in Noise in Devices and Circuits III, edited by Alexander A. Balandin, François Danneville, M. Jamal Deen, Daniel M. Fleetwood, Proc. of SPIE Vol. 5844, pp. 248-255 (2005)

1077. Y. Chen, H. Liu, M. J. Fitch, R. Osiander, J. B. Spicer, M. Shur, X. -C. Zhang, THz Diffuse Reflectance Spectra of Selected Explosive and Related Compounds, SPIE, Florida

1076. G. Simin and M. Asif Khan, M. S. Shur, R. Gaska, High-power switching using III-Nitride Metal-Oxide Semiconductor Heterostructures, International Journal of High Speed Electronics and Systems, Vol. XX, No. X 1-14 (2005)

1075. N. Dyakonova, S. L. Rumyantsev, M. S. Shur, Y. Meziani, F. Pascal, A. Hoffmann, Q. Fareed, X. Hu, Yu. Bilenko, R. Gaska, and W. Knap, High magnetic field studies of 1/f noise in GaN/AlGaN heterostructure field effect transistors, phys. stat. sol. (a) 202, No. 4, 677–679 (2005)

1074. S. K. O'Leary, B. E. Foutz, M. S. Shur, and L. F. Eastman, Electron transport within the III-V nitride semiconductors, GaN, AlN, and InN: A Monte Carlo Analysis, in Handbook of Electronic and Optoelectronic Materials, Springer

1073. S. L. Rumyantsev, S. Sawyer, N. Pala, M. S. Shur, Yu. Bilenko, J. P. Zhang, X. Hu, A. Lunev, J. Deng, and R. Gaska, . Low frequency noise of light emitting diodes, in Noise in Devices and Circuits III, edited by Alexander A. Balandin, François Danneville, M. Jamal Deen, Daniel M. Fleetwood, Proc. of SPIE Vol. 5844, pp. 75-85 (2005)

1072. M. Dyakonov and M. S. Shur, Current Instability of Plasma Waves Generation in Ungated Two Dimensional Electron Layers, Appl. Phys. Lett L05-1495 accepted for publication. AIP ID number 060536APL, tentatively scheduled for publication in the September 5, 2005 issue.

1071. M. S. Shur, R. Gaska, and A. Khan, Insulated and Recessed Gate AlN/GaN/InN-based HEMTs on Different Substrates, SSMD

1070 .J. Zhang, X. Hu, A. Lunev, J. Deng, Y. Bilenko, T. M Katona, M.S Shur, R. Gaska, M A.Khan, AlGaN Deep-Ultraviolet Light-Emitting Diodes, submitted to JJAP

1069. M. Dyakonov and M. S. Shur, Current Instability of Plasma Waves Generation in Ungated Two Dimensional Electron Layers, WOFE Proceedings, 2005

1068. F. Teppe, D. Veksler, V. Yu. Kachorovski, A. P. Dmitriev, S. Rumyantsev, W. Knap, and M.S. Shur, Room Temperature Plasma Waves Resonant Detection of sub-Terahertz Radiation by Nanometer Field Effect Transistor, Appl. Phys. Lett., submitted

1067. V. V. Popov, O. V. Polischuk, and M. S. Shur, Terahertz plasmon response of sub-100-nm gate field –effect transistor, Nanoconference, St. Petersburg, Russia, June (2005)

1066. M. S. Shur, GaN-based Devices, in Proceedings of the 5th Conference on Electronic Devices, Tarroga, Spain, February (2005)

1065. V. V. Popov, O. V. Polischuk, and M. S. Shur, Resonant Excitation of plasma oscillations in a partially gated two-dimensional electron layer, J. Appl. Phys., accepted

1064. R Stanikūnas, H Vaitkevičius, A Švegžda, V Viliūnas, Z Bliznikas, K Breivė, R Vaicekauskas, A Novičkovas, G Kurilčik, A Žukauskas, R Gaska, and M S Shur, Polychromatic solid-state lamps versus tungsten illuminant: Hue changes of Munsell samples, J. Phys. D, submitted

1063. A. Satou, I. Khmyrova, A. Chaplik, V. Ryzhii, and M. S. Shur, Spectrum of plasma oscillations in a slot diode with a two-dimensional electron channel, Jpn. J. Appl. Phys., submitted

1062. B. Iniguez, R. Picos, I. Kwon, M. S. Shur, T. A. Fjeldly, and K. Lee Accurate Compact MOSFET Modeling Scheme for Harmonic Distortion Analysis , JSTS, Volume 4, Number 3, p. 141 September 2004

1061. S. L. Rumyantsev, S. Sawyer, N. Pala, M. S. Shur, Yu. Bilenko, J. P. Zhang, X. Hu, A. Lunev, J. Deng, and R. Gaska, Low frequency noise of GaN-based UV LEDs, JOURNAL OF APPLIED PHYSICS 97, 123107 (2005)

1060. A. P. Dmitriev and M. E. Levinshtein, S. L. Rumyantsev and M. S. Shur, Tunneling mechanism of 1/f noise in GaN/AlGaN Heterojunction Field Effect Transistors, J. Appl. Phys.

1059. Y. Chen, Haibo Liu, Robert Osiander, James B. Spicer, Michael Shur, X. -C. Zhang, Far infrared spectra of TNT: diffuse reflection and density functional study, submitted to SPIE Conference, Florida (2005)

1058. M. S. Shur and A. Žukauskas. Editors, UV Solid-State Light Emitters and Detectors. Proc. NATO ARW, Series II, Vol. 144, ed. by, Kluwer, Dordrecht, 2004 ISBN 1-4020-2034-1 (ISBN 1-4020-2103-8 (e-book)

1057. N. Dyakonova, F. Teppe, J. Lusakowski, W. Knap, M. Levinshtein, V. Kachorovski, A. Dmitriev, M. S. Shur, S. Bollaert, and A. Cappy, Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors, J. Appl. Phys. 97, 114313 (2005)

1056. N. Pala, F. Teppe, D. Veksler, Y. Deng, M.S. Shur, R. Gaska, Nonresonant detection of terahertz radiation by Silicon-On-Insulator MOSFETs, Electronics Letters, Vol. 41 No. 7, 31st March 2005

1055. F. Teppe, Y. Meziani, N. Dyakonova, J. Lusakowski, W. Knap, F. Bœuf, T. Skotnicki, D. Maude, S. Rumyantsev, and M. S. Shur, Detection of sub-Terahertz and Terahertz Radiation by Plasma Waves in Silicon Field Effect Transistors 2004 IEEE Sensor Conference Proceedings, pp. 1337 – 1340 (2004)

1054. M. S. Shur, Semiconductors, in Electrical Engineering Handbook, Wai-Kai Chen, Editor, Elsevier Academic Press (2003), ISBN 0-12-170950-4, pp. 153-162

1053. Y. Bilenko, A. Lunev, X. Hu, J. Deng, T. M Katona, J. Zhang, R. Gaska, M. S Shur, W. Sun, V. Adivarahan, M. Shatalov, and A. Khan, 10 Milliwatt Pulse Operation of 265 nm, AlGaN Light Emitting Diodes, JJAP, Express Letter, Vol. 44, No. 3, pp. L98-L100 (2005)

1052. Q. Fareed, X. Hu, A. Tarakji, J. Deng, and R. Gaska, M. Shur, A. Khan, High Power AlGaN/InGaN/AlGaN/GaN Recessed Gate Heterostructure Field Effect Transistors, Appl. Phys. Lett. 86, 143512 (2005)

1051. S. L. Rumyantsev, S. Sawyer, N.Pala, and M. S. Shur, Yu. Bilenko and R. Gaska, Low frequency noise of GaN-based UV LEDs

1050. N. Braga, R. Mickevicius, R. Gaska, M. S. Shur, M. Asif Khan, and G. Simin, Edge Trapping Mechanism of Current Collapse in III-N FETs, IEDM-04 Technical Digest, IEDM Technical Digest. IEEE International
13-15 Dec. 2004 Page(s):815 - 818

1049. J. P. Zhang, X. Hu, Y. Bilenko, J. Deng, A. Lunev, M. S. Shur, R. Gaska, M. Shatalov, J. W. Yang, M. A. Khan, AlGaN Based 280 nm Light Emitting Diodes with Continuous-Wave Power Exceeding 1 mW at 25 mA, Appl. Phys. Lett., Vol. 85, pp. 5532-5534, No 23, 6 December, 2004

1048. G. Wetzel, M. S. Shur, U. K. Mishra, B. Gil, and K. Kishino, GaN and Related Alloys – 2000, Materials Research Society Symposium Proceedings, Vol. 639, G7.3, Editors (2001) ISBN 1-55899-549-8

1047. A. Satou, I. Khmyrova', A. Chaplik, V. Ryzhii, and M. S. Shur. Spectrum of Plasma Oscillations in a Slot Diode Structure with a Two-dimensional Electron Channel, In Abstracts of SSDM-2004, accepted

1046. J. Mickevičius, R. Aleksiejūnas, M.S. Shur, G. Tamulaitis, R.S.Q. Fareed, J.P. Zhang, R. Gaska, and M.A. Khan, Lifetime of nonequilibrium carriers in high-Al-content AlGaN epilayers, phys. stat. sol. (a) 202, 126-130 (2005)

1045. B. Iñiguez, M. S. Shur, T. A. Fjeldly, Trond Ytterdal, Thin Film Transistor Models for Circuit Simulation, in Proceeding of ECS, Honolulu (2003)

1044. R.B. Jain, R.S.Q. Fareed, J. Zhang, R. Gaska, E. Kuokstis, J. Yang, H.P. Maruska, M.A. Khan, J. Mickevicius, G. Tamulaitis, M.S. Shur, Growth of High Resistance Thick GaN Templates By HVPE, physica status solidi (c), to be published

1043. G. Tamulaitis, J. Mickevicius, R. Aleksiejunas, M. S. Shur, J. P. Zhang, Q. Fareed, R. Gaska, Dislocation-limited Lifetime of Nonequilibrium Carriers in AlGaN Epilayers, in Proceedings of ICPS-27, to be published (2004)

1042. D. Veksler, M. S. Shur, V. E. Houtsma, N. G. Weinmann, and Y. K. Chen, Numerical investigation of the effect of doping profiles on the high frequency performance of InP/InGaaA super scaled HBTs, International Journal of High Speed Electronics and Systems, Vol. 14, No 3, pp. 632-639, September (2004)

1041. G. Bu, D. Ciplys, M. Shur, L. J. Schowalter, and S. Schujman, R. Gaska, Leaky surface acoustic waves in single-crystal AlN substrate, International Journal of High Speed Electronics and Systems, Vol. 14, No 3, pp. 837-845, September (2004)

1040. S. Sawyer, S. L. Rumyantsev, N. Pala, M. S. Shur, Y. Bilenko, R. Gaska, P. V. Kosterin, and B. M. Salzberg, Noise characteristics of 340 nm and 280 nm GaN-based light emitting diodes, International Journal of High Speed Electronics and Systems, Vol. 14, No 3, pp. 702-707, September (2004)

1039. R. S. Qhalid Fareed, J. P. Zhang, R. Gaska, G. Tamulaitis, J. Mickevicius, R. Aleksiejunas, M. S. Shur, and M. A. Khan, Migration enhanced MOCVD (MEMOCVDTM) buffers for increased carrier lifetime in GaN and AlGaN epilayers on sapphire and SiC substrate, phys. stat. sol. (c) 1– 4 (2005)

1038. J. P. Zhang, Q. Fareed, R. Gaska, G. Tamulaitia, M. S. Shur, and M. Asif Khan, Migration Enhanced MOCVD (MEMOCVDTM) of High Quality III-Nitride Heterostructures and Superlattices, phys. stat. sol. (c)
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